W UX I C H I N A R E SO URC ES H U A JI N G MI C R O ELE C T R O N I C S C O . , LT D.

P a g e 2 o f 1 0

2 0 19 V 01

○

R

CS50N20 A0R

Electrical Characteristics（TJ= 25℃ unless otherwise specified）：

OFF Characteristics

Symbol

Parameter

Test Conditions

Rating

Unit

s

Min.

Typ.

Max.

VDSS

Drain to Source Breakdown Voltage

VGS=0V, ID=250µA

200

--

--

V

ΔBV

DSS/ΔTJ

Bvdss Temperature Coefficient

ID=250uA,Reference25℃

--

0.3

--

V/℃

IDSS

Drain to Source Leakage Current

VDS =200V, VGS= 0V,

TJ = 25℃

--

--

1

µA

VDS =160V, VGS= 0V,

TJ = 125℃

--

--

100

µA

IGSS(F)

Gate to Source Forward Leakage

VGS =+30V

--

--

100

nA

IGSS(R)

Gate to Source Reverse Leakage

VGS =-30V

--

--

-100

nA

ON Characteristics

Symbol

Parameter

Test Conditions

Rating

Units

Min.

Typ.

Max.

RDS(ON)

Drain-to-Source On-Resistance

VGS=10V,ID=20A

--

42

51

mΩ

VGS(TH)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

2.0

--

4.0

V

Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Rating

Units

Min.

Typ.

Max.

gfs

Forward Transconductance

VDS=15V, ID =20A

--

65

--

S

Ciss

Input Capacitance

VGS = 0V VDS = 25V

f = 1.0MHz

--

2819

--

pF

Coss

Output Capacitance

--

394

--

Crss

Reverse Transfer Capacitance

--

34

--

Resistive Switching Characteristics

Symbol

Parameter

Test Conditions

Rating

Units

Min.

Typ.

Max.

td(ON)

Turn-on Delay Time

ID =20A

VDD = 100V

RG =10Ω

--

35.7

--

ns

tr

Rise Time

--

38.9

--

td(OFF)

Turn-Off Delay Time

--

74.7

--

tf

Fall Time

--

21.9

--

Qg

Total Gate Charge

ID =20A

VDD =160V

VGS = 10V

--

49.4

--

nC

Qgs

Gate to Source Charge

--

13

--

Qgd

Gate to Drain (“Miller”)Charge

--

18

--