CS50N20 A0R

W UX I C H I N A R E SO URC ES H U A JI N G MI C R O ELE C T R O N I C S C O . , LT D.

P a g e 1 o f 1 0

2 0 19 V 01

○

R

Silicon

N-Channel

Power

MOSFET

General Description：

CS50N20

A0R,

the

silicon

N-channel

Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which

reduce

the

conduction

loss,

improve

switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-263,

which accords with the RoHS standard.

Features：

l Fast Switching

l Low ON Resistance(Rdson≤51mΩ)

l Low Gate Charge (Typical Data: 49.4nC)

l Low Reverse transfer capacitances(Typical:34pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（TJ= 25℃ unless otherwise specified）：

Symbol

Parameter

Rating

Units

VDSS

Drain-to-Source Voltage

200

V

ID

Continuous Drain Current TC = 25 °C

50

A

Continuous Drain Current TC = 100 °C

38.5

A

IDM

a1

Pulsed Drain Current TC = 25 °C

200

A

VGS

Gate-to-Source Voltage

±30

V

EAS

a2

Single Pulse Avalanche Energy

1700

mJ

dv/dt

a3

Peak Diode Recovery dv/dt

5.0

V/ns

PD

Power Dissipation TC = 25 °C

250

W

Derating Factor above 25°C

2.0

W/℃

TJ，Tstg

Operating Junction and Storage Temperature Range

150，–55 to 150

℃

VDSS

200

V

ID

50

A

PD(TC=25℃)

250

W

RDS(ON)Typ

42

mΩ