5.6 Typical Characteristics (continued)

TJ = 25°C, VIN = (VOUT(nom) + 1V), IOUT = 10mA, VEN = 2.2V, COUT = 2.2µF (unless otherwise noted)

10 s/div

m

100mV/div

V

OUT

V

IN

C

=10nF

NR

C

=10 F

OUT

m

4.3V

5.3V

Legacy silicon

Figure 5-37. TPS73733-Q1 Line Transient Response

New silicon

Figure 5-38. TPS73733-Q1 Line Transient Response

100 s/div

m

1V/div

1V/div

2V

0V

V

OUT

V

EN

R =20W

L

C

=10 F

m

OUT

R =20W

L

C

=1 F

m

OUT

Legacy silicon

Figure 5-39. TPS73701-Q1 Turn-On Response

New silicon

Figure 5-40. TPS73701-Q1 Turn-On Response

100 s/div

m

1V/div

1V/div

V

OUT

V

EN

R =20W

L

C

=10 F

m

OUT

2V

0V

R =20W

L

C

=1 F

m

OUT

Legacy silicon

Figure 5-41. TPS73701-Q1 Turn-Off Response

Time (

s)

0

200

400

600

800

1,000

-3

-2

-2

0

-1

2

0

4

1

6

2

8

3

10

4

12

COUT = 0F

COUT = 1F

COUT = 10F

COUT = 100F

VEN

New silicon

Figure 5-42. TPS73701-Q1 Turn-Off Response

TPS737-Q1

SBVS123C – DECEMBER 2008 – REVISED MARCH 2025

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