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DMT4014LDV Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMT4014LDV Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page ![]() DMT4014LDV Document number: DS42919 Rev. 2 - 2 4 of 7 www.diodes.com December 2020 © Diodes Incorporated DMT4014LDV 0 5 10 15 20 25 30 0 0.4 0.8 1.2 1.6 2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current T J = -55 oC T J = 25 oC T J = 85 oC T J = 125 oC T J = 150 oC 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance f = 1MHz C iss C oss C rss V GS = 0V 0.01 0.1 1 10 100 1000 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area R DS(ON) Limited T J(Max) = 150℃ T A = 25℃ Single Pulse DUT on 1*MRP Board V GS = 10V DC P W = 10s P W = 1s P W = 100ms P W = 10ms P W = 1ms P W = 100µs 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 Q g (nC) Figure 11. Gate Charge V DS = 20V, IS = 20A 0 0.004 0.008 0.012 0.016 0.02 0.024 0.028 0.032 0.036 0.04 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature V GS = 4.5V, ID = 15A V GS = 10V, ID = 20A 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature I D = 1mA I D = 250μA |
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