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TLHO4900 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TLHO4900 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 11 page  www.vishay.com 2 Document Number 83009 Rev. 1.5, 31-Aug-04 VISHAY TLHG / O / P / R / Y4900 Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLHR4900 1) in one Packing Unit I Vmin/IVmax ≤ 0.5 Soft Orange TLHO4900 1) in one Packing Unit I Vmin/IVmax ≤ 0.5 Yellow TLHY4900 1) in one Packing Unit I Vmin/IVmax ≤ 0.5 Storage temperature range Tstg - 55 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C Thermal resistance junction/ ambient RthJA 400 K/W Parameter Test condition Symbol Min Typ. Max Unit Luminous intensity 1) IF = 10 mA IV 6.3 13 mcd Dominant wavelength IF = 10 mA λd 612 625 nm Peak wavelength IF = 10 mA λp 635 nm Angle of half intensity IF = 10 mA ϕ ± 16 deg Forward voltage IF = 20 mA VF 23 V Reverse voltage IR = 10 µAVR 615 V Junction capacitance VR = 0, f = 1 MHz Cj 50 pF Parameter Test condition Symbol Min Typ. Max Unit Luminous intensity 1) IF = 10 mA IV 10 26 mcd Dominant wavelength IF = 10 mA λd 598 611 nm Peak wavelength IF = 10 mA λp 605 nm Angle of half intensity IF = 10 mA ϕ ± 16 deg Forward voltage IF = 20 mA VF 2.4 3 V Reverse voltage IR = 10 µAVR 615 V Junction capacitance VR = 0, f = 1 MHz Cj 50 pF Parameter Test condition Symbol Min Typ. Max Unit Luminous intensity 1) IF = 10 mA IV 10 26 mcd Dominant wavelength IF = 10 mA λd 581 594 nm Peak wavelength IF = 10 mA λp 585 nm Angle of half intensity IF = 10 mA ϕ ± 16 deg Forward voltage IF = 20 mA VF 2.4 3 V Reverse voltage IR = 10 µAVR 615 V Junction capacitance VR = 0, f = 1 MHz Cj 50 pF Parameter Test condition Symbol Value Unit |
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