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OPA855 Datasheet(PDF) 15 Page - Texas Instruments

Part # OPA855
Description  OPA955 11GHz Gain Bandwidth Product, Gain of 7V/V Stable, Bipolar Input Amplifier
PDF  20 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

OPA855 Datasheet(HTML) 15 Page - Texas Instruments

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When configuring the OPA955 as a transimpedance amplifier, take care to minimize the inductance between the
avalanche photodiode (APD) and the amplifier. Always place the photodiode on the same side of the PCB as
the amplifier. Placing the amplifier and the APD on opposite sides of the PCB increases the parasitic effects
due to via inductance. APD packaging can be quite large, which often requires the APD to be placed further
away from the amplifier than ideal. Figure 9-3 shows that the added distance between the two device results in
increased inductance between the APD and op amp feedback network. The added inductance is detrimental to
a decompensated amplifiers stability because this inductance isolates the APD capacitance from the noise-gain
transfer function. The noise gain is given by Equation 1. The added PCB trace inductance between the feedback
network increases the denominator in Equation 1 thereby reducing the noise gain and the phase margin. In
cases where a leaded APD in a TO-can package is used, further minimize inductance by cutting the leads of the
TO-can package as short as possible.
Noise Gain= 1+ ZFZIN
(1)
where
• ZF is the total impedance of the feedback network.
• ZIN is the total impedance of the input network.
The layout shown in Figure 9-3 is improved by following some of the guidelines in Figure 9-4. The two key rules
to follow are:
1. Add an isolation resistor RISO as close as possible to the inverting input of the amplifier. Select the value
of RISO to be between 10Ω and 20Ω. The resistor dampens the potential resonance caused by the trace
inductance and the amplifiers internal capacitance.
2. Close the loop between the feedback elements (RF and CF) and RISO as close to the APD pins as possible.
This closure provides a more balanced layout and reduces the inductive isolation between the APD and the
feedback network.
Vbias
CF
1
FB
8
PD
2
NC
7 VS+
3
IN±
6 OUT
4
IN+
5 VS±
Thermal
Pad
APD
Package
Trace inductance isolates
APD capacitance from the
amplifier noise gain
RF
Figure 9-3. Non-Ideal TIA Layout
Vbias
Place RISO close to IN±
Close the loop close
to APD pins
1
FB
8
PD
2
NC
7 VS+
3
IN±
6 OUT
4
IN+
5 VS±
Thermal
Pad
APD
Package
CF
RF
RISO
Figure 9-4. Improved TIA Layout
www.ti.com
OPA955
SLOSEE6 – JULY 2026
Copyright © 2026 Texas Instruments Incorporated
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Product Folder Links: OPA955



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