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AT45DB021E Datasheet(PDF) 47 Page - Renesas Technology Corp |
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AT45DB021E Datasheet(HTML) 47 Page - Renesas Technology Corp |
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47 / 69 page ![]() DS-AT45DB021E-8789 Rev. N Page 47 3/24/26 © 2012-2026 Renesas Electronics AT45DB021E Datasheet 20. Electrical Specifications 20.1 Absolute Maximum Ratings* 20.2 DC and AC Operating Range 20.3 DC Characteristics 1. Typical values measured at 1.8V @ 25 °C for the 1.65 V to 3.6 V range. 2. Typical values measured at 3.0V @ 25 °C for the 2.3 V to 3.6 V range. Note: All inputs (SI, SCK, CS, WP, and RESET) are guaranteed by design to be 5 V tolerant; however, usage of 5 V tolerance for extended periods can affect device reliability. Temperature under Bias . . . . . . -55 °C to +125 °C Storage Temperature. . . . . . . . . -65 °C to +150 °C All Input Voltages (except VCC but including NC pins) with Respect to Ground. . . . . . . . -0.6 V to +6.25 V All Output Voltages with Respect to Ground. . . . .-0.6 V to VCC + 0.6 V Notice: Stresses beyond those listed under “Absolute Maximum Ratings” can cause permanent damage to the device. The “Absolute Maximum Ratings” are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods can affect device reliability. Voltage extremes referenced in the “Absolute Maximum Ratings” are intended to accommodate short duration undershoot/overshoot conditions and does not imply or guarantee functional device operation at these levels for any extended period of time. AT45DB021E Operating Temperature (Case) Industrial -40 C to 85 C VCC Power Supply 1.65 V to 3.6 V Table 34. DC Characteristics Symbo l Parameter Condition 1.65 V to 3.6 V 2.3 V to 3.6 V Units Min Typ Max Min Typ Max IUDPD Ultra-Deep Power- Down Current CS = VCC. All other inputs at 0 V or VCC 0.2 1 0.35 1 µA IDPD Deep Power-Down Current CS = VCC. All other inputs at 0 V or VCC 4.5 12 5 12 µA ISB Standby Current CS = VCC. All other inputs at 0 V or VCC 25 40 25 40 µA ICC1[1][2] Active Current, Low Power Read (01h) Operation f = 1 MHz; IOUT = 0 mA 69 6 9 mA f = 15 MHz; IOUT = 0 mA 710 7 10 mA ICC2[1][2] Active Current, Read Operation f = 50 MHz; IOUT = 0 mA 10 12 10 12 mA f = 85 MHz; IOUT = 0 mA 12 15 12 15 mA ICC3[1][2] Active Current, Program Operation CS = VCC 10 12 10 12 mA ICC4[1][2] Active Current, Erase Operation CS = VCC 812 8 12 mA ILI Input Load Current All inputs at CMOS levels 11 µA ILO Output Leakage Current All inputs at CMOS levels 11 µA VIL Input Low Voltage VCC x 0.2 VCC x 0.3 V VIH Input High Voltage VCC x 0.8 VCC x 0.7 V VOL Output Low Voltage IOL = 100 µA 0.2 0.4 V VOH Output High Voltage IOH = -100 µA VCC - 0.2 V VCC - 0.2 V V |
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