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AT45DB021E Datasheet(PDF) 47 Page - Renesas Technology Corp

Part # AT45DB021E
Description  2-Mbit DataFlash (with Extra 64 kbits) 1.65 V Minimum SPI Serial Flash Memory
PDF  69 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT45DB021E Datasheet(HTML) 47 Page - Renesas Technology Corp

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DS-AT45DB021E-8789 Rev. N
Page 47
3/24/26
© 2012-2026 Renesas Electronics
AT45DB021E Datasheet
20. Electrical Specifications
20.1 Absolute Maximum Ratings*
20.2 DC and AC Operating Range
20.3 DC Characteristics
1. Typical values measured at 1.8V @ 25
°C for the 1.65 V to 3.6 V range.
2. Typical values measured at 3.0V @ 25
°C for the 2.3 V to 3.6 V range.
Note: All inputs (SI, SCK, CS, WP, and RESET) are guaranteed by design to be 5 V tolerant; however, usage of
5 V tolerance for extended periods can affect device reliability.
Temperature under Bias . . . . . . -55 °C to +125 °C
Storage Temperature. . . . . . . . . -65 °C to +150 °C
All Input Voltages
(except VCC but including NC pins)
with Respect to Ground. . . . . . . . -0.6 V to +6.25 V
All Output Voltages
with Respect to Ground. . . . .-0.6 V to VCC + 0.6 V
Notice: Stresses beyond those listed under “Absolute Maximum
Ratings” can cause permanent damage to the device. The “Absolute
Maximum Ratings” are stress ratings only and functional operation of
the device at these or any other conditions beyond those indicated in
the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods can
affect device reliability. Voltage extremes referenced in the “Absolute
Maximum Ratings” are intended to accommodate short duration
undershoot/overshoot conditions and does not imply or guarantee
functional device operation at these levels for any extended period of
time.
AT45DB021E
Operating Temperature (Case)
Industrial
-40
C to 85 C
VCC Power Supply
1.65 V to 3.6 V
Table 34. DC Characteristics
Symbo
l
Parameter
Condition
1.65 V to 3.6 V
2.3 V to 3.6 V
Units
Min
Typ
Max
Min
Typ
Max
IUDPD
Ultra-Deep Power-
Down Current
CS = VCC. All other
inputs at 0 V or VCC
0.2
1
0.35
1
µA
IDPD
Deep Power-Down
Current
CS = VCC. All other
inputs at 0 V or VCC
4.5
12
5
12
µA
ISB
Standby Current
CS = VCC. All other
inputs at 0 V or VCC
25
40
25
40
µA
ICC1[1][2]
Active Current, Low
Power Read (01h)
Operation
f = 1 MHz;
IOUT = 0 mA
69
6
9
mA
f = 15 MHz;
IOUT = 0 mA
710
7
10
mA
ICC2[1][2]
Active Current, Read
Operation
f = 50 MHz;
IOUT = 0 mA
10
12
10
12
mA
f = 85 MHz;
IOUT = 0 mA
12
15
12
15
mA
ICC3[1][2]
Active Current,
Program Operation
CS = VCC
10
12
10
12
mA
ICC4[1][2]
Active Current, Erase
Operation
CS = VCC
812
8
12
mA
ILI
Input Load Current
All inputs at CMOS
levels
11
µA
ILO
Output Leakage
Current
All inputs at CMOS
levels
11
µA
VIL
Input Low Voltage
VCC x 0.2
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.8
VCC x 0.7
V
VOL
Output Low Voltage
IOL = 100 µA
0.2
0.4
V
VOH
Output High Voltage
IOH = -100 µA
VCC - 0.2 V
VCC - 0.2 V
V



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