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AT45DB021E Datasheet(PDF) 53 Page - Renesas Technology Corp |
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AT45DB021E Datasheet(HTML) 53 Page - Renesas Technology Corp |
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53 / 69 page ![]() DS-AT45DB021E-8789 Rev. N Page 53 3/24/26 © 2012-2026 Renesas Electronics AT45DB021E Datasheet 25. Write Operations The following block diagram and waveforms illustrate the various write sequences available. Figure 31. Block Diagram Figure 32. Buffer Write Figure 33. Buffer to Main Memory Page Program Flash Memory Array I/O Interface SI Buffer To Main Memory Page Program Buffer Write Page (256/264 bytes) Buffer (256/264 bytes) CS SI (Input) CMD X X···X, BFA8 BFA7-0 n n + 1 Last Byte Completes Writing into Selected Buffer Binary Page Size 16 Dummy Bits + BFA7-BFA0 CS SI (Input) CMD PA9-7 PA6-0, X XXXX XXX Starts Self-timed Erase/Program Operation Binary Page Size A17-A8 + 8 Dummy Bits n = 1st byte read n+1 = 2nd byte read Each transition represents eight bits |
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