CHA3513

6-18GHz Digital Variable Amplifier

Ref. : DSCHA35136216 - 04 Aug 06

2/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics on wafer

Tamb = +25°C

Vd= Pads B, D, F= 4.5V, Vg= Pads A, C, E tuned for Id= 300mA

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range (1)

6

18

GHz

G

Small signal gain @ Attenuator state 0dB (1)

16

dB

ATT bit

Attenuator bit: State 5dB

State 10 dB 1

State 10dB 2

5

10

10

dB

dB

dB

ATT dyn

Attenuator range with 3bit

25

dB

Is

Small signal gain @ Attenuator state 0dB & switch

OFF (1)

-35

dB

P1dB

Output power at 1dB compression @ Attenuator

state 0dB (1)

18

dBm

Psat

Saturated Output power @ Attenuator state 0dB (1)

20

dBm

NF

Noise figure @ Attenuator state 0dB

12

dB

VSWRin

Input VSWR all attenuator states

2.0:1

VSWRout

Output VSWR all attenuator states & switch ON

2.0:1

Vd

Drain bias DC voltage (

Pads B,D,F)

4.5

V

Id

Bias current @ small signal

300

350

mA

Vc

Control voltage for Attenuator bits & SPST switch

-5

0

V

(1) These values are representative for pulsed on-wafer measurements that are made without

bonding wires at the RF ports.