74HC_HCT10

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Product data sheet

Rev. 3 — 5 August 2016

3 of 14

NXP Semiconductors

74HC10; 74HCT10

Triple 3-input NAND gate

6.

Functional description

[1]

H = HIGH voltage level; L = LOW voltage level; X = don’t care

7.

Limiting values

[1]

The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2]

For SO14 package: Ptot derates linearly with 8 mW/K above 70 C.

For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C.

8.

Recommended operating conditions

Table 3.

Function selection[1]

Input

Output

nA

nB

nC

nY

LX

X

H

XL

XH

XX

L

H

HH

HL

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Max

Unit

VCC

supply voltage

0.5

+7

V

IIK

input clamping current

VI < 0.5 V or VI >VCC +0.5 V

[1]

-

20

mA

IOK

output clamping current

VO < 0.5 V or VO >VCC +0.5 V

[1]

-

20

mA

IO

output current

0.5 V < V

O < VCC +0.5 V

-

25

mA

ICC

supply current

-

50

mA

IGND

ground current

50

-

mA

Tstg

storage temperature

65

+150

C

Ptot

total power dissipation

SO14 and (T)SSOP14

[2]

-500

mW

Table 5.

Recommended operating conditions

Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

74HC10

74HCT

Unit

Min

Typ

Max

Min

Typ

Max

VCC

supply voltage

2.0

5.0

6.0

4.5

5.0

5.5

V

VI

input voltage

0

-

VCC

0-

VCC

V

VO

output voltage

0

-

VCC

0-

VCC

V

Tamb

ambient temperature

40

-

+125

40

-

+125

C

t/V

input transition rise and fall rate

VCC = 2.0 V

-

-

625

-

-

-

ns/V

VCC = 4.5 V

-

1.67

139

-

1.67

139

ns/V

VCC = 6.0 V

-

-

83

-

-

-

ns/V