74LVC594A

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Product data sheet

Rev. 2 — 21 October 2013

5 of 20

NXP Semiconductors

74LVC594A

8-bit shift register with output register

7.

Functional description

[1]

H = HIGH voltage state;

L = LOW voltage state;

 = LOW-to-HIGH transition;

X = don’t care;

NC = no change;

8.

Limiting values

[1]

The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2]

For SO16 packages: above 70

C the value of P

tot derates linearly with 8 mW/K.

For TSSOP16 packages: above 60

C the value of P

tot derates linearly with 5.5 mW/K.

For DHVQFN16 packages: above 60

C the value of P

tot derates linearly with 4.5 mW/K.

Table 3.

Function table[1]

Input

Output

Function

SHCP STCP SHR

STR

DS

Q7S

Qn

XXL

XXL

NC

a LOW-state on SHR only affects the shift register

X

X

X

L

X

NC

L

a LOW-state on STR only affects the storage register

X



L

H

X

L

L

empty shift register loaded into storage register



X

H

X

H

Q6S

NC

logic HIGH level shifted into shift register stage 0. Contents of all

shift register stages shifted through, e.g. previous state of stage 6

(internal Q6S) appears on the serial output (Q7S).

X



H

H

X

NC

QnS

contents of shift register stages (internal QnS) are transferred to

the storage register and parallel output stages



H

H

X

Q6S

QnS

contents of shift register shifted through; previous contents of the

shift register is transferred to the storage register and the parallel

output stages

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Max

Unit

VCC

supply voltage

0.5

+6.5

V

IIK

input clamping current

VI <0 V

50

-

mA

VI

input voltage

[1]

0.5

+6.5

V

IOK

output clamping current

VO >VCC or VO <0 V

-

50

mA

VO

output voltage

3-state

[1]

0.5

6.5

V

output HIGH or LOW state

[1]

0.5

VCC +0.5

V

IO

output current

VO =0 VtoVCC

-

50

mA

ICC

supply current

-

100

mA

IGND

ground current

100

-

mA

Tstg

storage temperature

65

+150

C

Ptot

total power dissipation

Tamb = 40 C to +125 C

[2] -500

mW