LTC4366

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23

Rev. F

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subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

REVISION HISTORY

REV

DATE

DESCRIPTION

PAGE NUMBER

A

1/12

Added Patents Pending statement

Revised Figure 4 in Applications Information section

1

11

B

2/12

Removed reference to overcurrent faults under MOSFET Selection

Fixed orientation of M2 in Figure 8

13

18

C

8/12

Updated Shutdown current from <20µA to <14µA

Changed MOSFET part number and Gate Capacitor value used in the Typical Application

Added MP-grade order information and specifications

Added negative sign to graphs G12 x-axis and G18, G21 y-axis

Changed MOSFET part number in Figure 1 and Figure 6

Added section GATE Capacitor, CG

Changed ILOAD current from 5A to 3A in Design Example

Updated C1(MAX) values in Step 5 calculations to 0.27µF and worst case 0.49µF

Updated calculated values in Step 7, added supporting text

Changed MOSFET part number and GATE capacitor used in Figure 7

1

1

2, 3, 4, 5

6, 7

11, 16

15

16

18

19

19

D

8/13

Simplified Diagram: Corrected amplifier’s input polarity in Regulate Diagram

Functional Diagram: Added switch in series with TIMER pull-down current

9

9

E

8/15

Clarified “Ambient” on Operating Temperature Range; raised TJMAX to 150°C

TIMER Pin Function: Changed 278ms/µF to 311ms/µF

Figures 1, 6, 8: Changed CT to 8.2nF from 10nF

In CT equation, changed constant to 3.2 from 3.5; updated CT calculation

2

8

11, 16, 20

12, 19

F

2/24

Updated Electrical Characteristics table

4, 5