STB3NC60 datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STB3NC60

Description	N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STB3NC60

N - CHANNEL 600V - 3.3

Ω -3A - D2PAK/I2PAK

PowerMESH

™ ΙΙ MOSFET

ν

TYPICAL RDS(on) = 3.3

Ω

ν

EXTREMELY HIGH dv/dt CAPABILITY

ν

100% AVALANCHE TESTED

ν

VERY LOW INTRINSIC CAPACITANCES

ν

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™ II is the evolution of the first

generation of MESH OVERLAY

™ . The layout

refinements

introduced

greatly

improve

the

Ron*area figure of merit while keeping the device

at the leading edge for what concerns switching

speed, gate charge and ruggedness.

APPLICATIONS

ν

HIGH CURRENT, HIGH SPEED SWITCHING

ν

SWITCH MODE POWER SUPPLIES (SMPS)

ν

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

February 2000

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Uni t

VDS

Drain-source Voltage (VGS = 0)

600

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

600

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC3

A

ID

Drain Current (continuous) at Tc = 100

oC

1.9

A

IDM(

•)

Drain Current (pulsed)

12

A

Ptot

T otal Dissipation at Tc =25

oC80

W

Derating Fact or

0. 64

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4

V/ ns

Tstg

Storage Temperat ure

-65 to 150

oC

Tj

Max. O perat ing Junct ion Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤3A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

T YPE

VDSS

RDS(on)

ID

STB3NC60

600 V

< 3.6

Ω

3A

1

2 3

1

3

I

2PAK

TO-262

(Suffix ”-1”)

D

2PAK

TO-263

(Suffix ”T4”)

1/9

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