STB3NC60 datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Cond iti ons

Mi n.

Typ .

Max.

Un it

td(on)

Turn-on T ime

Rise Time

VDD =300 V

ID =1.5 A

RG =4.7

Ω

VGS =10 V

(see test circuit , figure 3)

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =480 V

ID =3 A VGS =10 V

2.3

4.4

18.2

SWITCHING OFF

Symbo l

Parameter

Test Cond iti ons

Mi n.

Typ .

Max.

Un it

tr(Voff)

Off-volt age Rise Time

Fall T ime

Cross-over Time

VDD =480 V

ID =3 A

RG =4.7

Ω VGS =10 V

(see test circuit , figure 5)

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Cond iti ons

Mi n.

Typ .

Max.

Un it

ISD

ISDM (

•)

Source-drain Current

(pulsed)

VSD (

∗)Forward On Voltage

ISD =3 A

VGS =0

1.6

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 3 A

di/ dt = 100 A/

µs

VDD =100 V

Tj = 150

(see test circuit , figure 5)

420

1.5

7.1

µC

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area for D

2PAK/I2PAK

Thermal Impedancefor D

2PAK/I2PAK

STB3NC60

3/9

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