STB3NC60 datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

THERMAL DATA

Rthj- ca se

Thermal Resistance Junction-case

Max

1. 56

oC/W

Rthj-a mb

Rthc -sin k

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

oC/W

AVALANCHE CHARACTERISTICS

Symbo l

Parameter

Max Valu e

Uni t

IAR

Avalanche Current, Repetitive or Not -Repet itive

(pulse width limit ed by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

100

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbo l

Parameter

Test Cond iti ons

Mi n.

Typ .

Max.

Un it

V( BR)DSS

Drain-source

Breakdown Voltage

ID = 250

µAVGS =0

600

IDSS

Zero G ate Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS = Max Rating

Tc = 125

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 30 V

± 100

ON (

∗)

Symbo l

Parameter

Test Cond iti ons

Mi n.

Typ .

Max.

Un it

VGS(th )

Gate Threshold Voltage VDS =VGS

ID =250

µA

RDS(on )

Static Drain-source On

Resistance

VGS = 10V

ID = 1.5 A

3.3

3.6

Ω

ID(on)

On Stat e Drain Current

VDS >ID(on ) xRDS(on )max

VGS =10 V

DYNAMIC

Symbo l

Parameter

Test Cond iti ons

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconductance

VDS >ID(on ) xRDS(on )max

ID =1.5 A

Cis s

Cos s

Crs s

Input Capacit ance

Output Capacitance

Reverse T ransf er

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

400

STB3NC60

2/9

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