PSPICE PARAMETERS

SUBCIRCUIT COMPONENTS

Symb ol

Parameter

Valu e

Uni t

S1

(V14_16<0) (See Power Mosfet Model Subcircuit)

O N

S2

(V16_11<0) (See Power Mosfet Model Subcircuit)

O N

LD

Drain Induct ance

8

nH

LG

Gate I nductance

10

nH

LS

Source Inductance

10

nH

RDRAIN

Drain Resistance

1.9E

-2

Ω

RG ATE

Gate Resistance

1

Ω

CG D

Gate Drain Capacitance

3.92

nF

CGS

Gate Source Capacit ance

1. 9

nF

ALFA

Drift Coef icient

1E

-3

V

-1

RG N

Negative Bias Resistance

10

K

Ω

DIODE DRAIN GATE (Depletion Capacitance)

Symb ol

Parameter

Valu e

Uni t

CJO

Zero Bias p-n Capacitance

2. 6

nF

VJ

p-n Potential

0. 1

V

M

p-n G rading Coef ficient

0. 6

DIODE DRAIN SOURCE

Symb ol

Parameter

Valu e

Uni t

CJO

Zero Bias p-n Capacitance

7. 8

nF

VJ

p-n Potential

0. 1

V

M

p-n G rading Coef ficient

0. 6

TT

Transit Time

20

nsec

N MOSFET

Symb ol

Parameter

Valu e

Uni t

L

Channel Lengt h

1

µMeter

W

Channel Width

1

µMeter

LEVEL

Model I ndex

3

TO X

Oxide Thickness

1

Met er

VT O

Zero Bias Threshold Voltage

3.25

V

U0

Surface Mobility

600

cm

THETA

Mobility Modulation

0.005

V

-1

Vmax

Maximum Drif t Velocit y

0

Meter/sec

KP

Trans Conductance Coefficient

28

Amp/V

2

For Transient Simulation Applicate U.I.C. (Use Initial Condition) Option

STP38N06

8/11