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STP38N06 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP38N06
Description  N - CHANNEL ENHANCEMENT MODE U"LTRA HIGH DENSITY” POWER MOS TRANSISTOR
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP38N06 Datasheet(HTML) 1 Page - STMicroelectronics

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STP38N06
N - CHANNEL ENHANCEMENT MODE
”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.026
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
HIGH CURRENT CAPABILITY
s
175
oC OPERATING TEMPERATURE
s
HIGH dV/dt RUGGEDNESS
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
POWER MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
VDS
Drain-source Voltage (VGS =0)
60
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)60
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc =25
oC38
A
ID
Drain Current (continuous) at Tc =100
oC26
A
IDM(
•)
Drain Current (pulsed)
152
A
Ptot
Total Dissipation at Tc =25
oC90
W
Derat ing Factor
0.6
W/
oC
dV/dt (1 )
Peak Diode Recovery volt age slope
7
V/ ns
Tstg
St orage Temperature
-65 to 175
oC
Tj
Max. Operating Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
ST P38N06
60 V
< 0.03
Ω
38 A (*)
March 1996
1
2
3
TO-220
1/11


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