STP38N06 datasheet(9/11 Pages) STMICROELECTRONICS

Part #	STP38N06

Description	N - CHANNEL ENHANCEMENT MODE U"LTRA HIGH DENSITY” POWER MOS TRANSISTOR

PDF	11 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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9 / 11 page

PSPICE NETLIST OF THE SUBCIRCUIT

. SUBCKT STP38N06 1 2 3

*VALUE OF THE PACKAG E INDUCTANCES

LS 1 11 10n

LG 2 12 10n

LD 3 13 7n

*RESISTA NCE OF THE G AT E

POLYSILI CON

RG 12 16 1

*EPY AND DRIF T RESISTANCES

RD 13 14 1. 9e-02

EDRI 14 15 POLY(2) (13 14) (13 11) 0 0 0 0

1e-3

*CAPACITANCE G ATE SO URCE

CGS 16111.90n

*OPT IO NAL FO R NEGAT IVE GATE BIAS

*S2 51 111116 SWI TCH

*CGN 51 16 3.92n

*RGN 51 16 10k

*MILLER CAPACI TANCE

CGD 16 17 3.92n

* DEPLET ION CAPACIT ANCE

DGD 17 14 DGD

S1 17 14 16 14 SW ITCH

.MODEL DGD D +IS=

+CJO =2. 6n

+Vj=.1

+M=.6

. MODEL SWITCH VSW IT CH

+RON=1m

+ROF F=1MEG

+VON=0. 1

* OUTPUT CAPACITANCE AND BODY DRAI N DI ODE

DBD 11 14 DBD

.MODEL DBD D

+TT=20n

+CJO =7. 8n

+VJ=.1

+M=.6

* MODEL OF THE MOSFET

MMAI N 15 16 11 11 MMAI N L=1u W =1u

. MODEL MMAIN NMO S

+LEVEL=3

+TOX=1

+VTO =3. 25

+uo=600

+THETA=0.005

+VMAX=5e7

+KP=28

.ENDS

Power Mosfet Model Subcircuit

STP38N06

9/11

STP38N06 Datasheet(PDF) 9 Page - STMicroelectronics

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