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TUSB6015 Datasheet(PDF) 5 Page - Texas Instruments |
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TUSB6015 Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 28 page ![]() TUSB6015ZQE SLLS937 REVISION 1.4 SEPTEMBER 10, 2008 Electrical Characteristics for the Digital I/O T A = -30°C - 85°C, VDD18 = 1.8 V ±10%, VSS = 0 V (Unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VI Input voltage LVCMOS 0 VDD18 V V O Output voltage LVCMOS 0 VDD18 V V IH High–level input voltage LVCMOS 0.7 x VDD18 VDD18 V V IL Low–level input voltage LVCMOS 0 0.3 x VDD18 V V OH High–level output voltage LVCMOS I OH = 8mA 0.8 × VDD18 V LVCMOS open–drain I OL = 4mA 0.22 x VDD18 LVCMOS I OL = 8mA 0.22 x VDD18 V V OL Low–level output voltage LVCMOS (1.5V_SWEN, 3.3V_SWEN only) I OL = 100uA 10 mV I IH High–level input current LVCMOS V I = VI max ±1 uA I IL Low–level input current LVCMOS V I = VI min ±1 uA I OZ Output leakage current (high–Z) V I = VI max or V SS ±20 uA C i Input Capacitance (1.8V NOR Interface) 2.43 pF t r, tf Input rise/fall time 0 25 ns 5 WWW.TI.COM |
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