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2SK1968 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SK1968
Description  Silicon N Channel MOS FET
PDF  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1968 Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SK1968
Rev.2.00 Sep 07, 2005 page 4 of 6
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Switching Characteristics
Drain Current ID (A)
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
10 A
I
= 5 A
Pulse test
V
= 10 V
GS
D
0
50
20
10
5
2
1
0.5
0.1 0.2
0.5
1
2
5
10
20
Pulse test
V
= 20 V
DS
Tc = –25
°C
25
°C
75
°C
3000
2000
1000
500
200
100
0.1 0.2
0.5
1
2
5
10
20
di/dt = 100 A/
µs
V
= 0, Ta = 25
°C
GS
5000
2000
1000
500
200
100
50
20
10
010
20
30
40
50
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
1000
800
600
400
200
0
204060
80
100
I
= 12 A
D
VGS
VDS
V
= 100 V
250 V
400 V
DD
V
= 400 V
250 V
100 V
DD
20
16
12
8
4
0
300
200
100
50
20
10
0.1 0.2
0.5
1
2
5
10
20
V
= 10 V, PW = 5
µs
duty
1 %, V
30 V
GS
DD
td(off)
tf
td(on)
tr



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