2SK1968 datasheet(2/7 Pages) RENESAS

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2SK1968

Rev.2.00 Sep 07, 2005 page 2 of 6

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

600

Gate to source voltage

VGSS

±30

Drain current

Drain peak current

ID(pulse)*

Body to drain diode reverse drain current

IDR

Channel dissipation

Pch*

100

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

600

—

ID = 10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±30

—

IG =

±100 µA, VDS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS =

±25 V, VDS = 0

Zero gate voltage drain current

IDSS

—

250

µA

VDS = 500 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

2.0

—

3.0

ID = 1 mA, VDS = 10 V

Static drain to source on state

resistance

RDS(on)

—

0.68

0.88

Ω

ID = 6 A, VGS = 10 V*

Forward transfer admittance

|yfs|

—

ID = 6 A, VDS = 10 V*

Input capacitance

Ciss

—

1800

—

Output capacitance

Coss

—

400

—

Reverse transfer capacitance

Crss

—

VDS = 10 V, VGS = 0,

f = 1 MHz

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

145

—

Fall time

—

ID = 6 A, VGS = 10 V,

RL = 5

Ω

Body to drain diode forward voltage

VDF

—

1.1

—

IF = 12 A, VGS = 0

Body to drain diode reverse

recovery time

trr

—

670

—

IF = 12 A, VGS = 0,

diF/dt = 100 A/

µs

Note:

3. Pulse Test

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