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2SK1968 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SK1968
Description  Silicon N Channel MOS FET
PDF  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1968 Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SK1968
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Power vs. Temperature Derating
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
200
150
100
50
0
50
100
150
200
100
30
10
3
1
0.3
0.1
5
10
30
100
300
1000
10
µs
PW
=
10
ms(1
shot)
100
µs
1 ms
DC
O
perati
on
(Tc
=
25
°C)
Operation in this area
is limited by R
Ta = 25
°C
DS(on)
20
16
12
8
4
0
102030
40
50
4.5 V
V
= 4 V
GS
5 V
Pulse test
10 V
6 V
20
16
12
8
4
02
4
6
8
10
25
°C
Tc = 75
°C
–25
°C
Pulse test
V
= 20 V
DS
20
16
12
8
4
04
8
12
16
20
15 A
I
= 5 A
10 A
Pulse test
D
5
2
1
0.5
0.2
0.1
1
2
5
10
20
50
100
V
= 10 V
Pulse test
GS



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