R32C121 datasheet(82/113 Pages) RENESAS

82 / 113 page

REJ03B0237-0050 Rev.0.50 Jul 31, 2008

Page 82 of 111

Under development

Preliminary Specification

This is a preliminary specification and is subject to change.

R32C/121 Group

5. Electrical Characteristics

Notes:

Program/erase definition

This value represents the number of erasure per block.

If the flash memory is programmed/erased n times, each block can be erased n times.

i.e. If a word write is performed in different 16 addresses in a block and then the block is erased, it

is considered the programming/erasure is performed just once. However a write in the same

address more than once for one erasure is disabled. (overwrite disabled).

The data retention time includes the periods when the supply voltage is not applied and no clock is

provided.

This data retention includes the following 10000 hours: 3000 hours in Ta = 125°C and 7000 hours in

Ta = 85°C.

Please contact a Renesas sales office regarding data retention time other than the above.

Table 5.9

E2data Flash Electrical Characteristics

(VCC = 3.0 to 5.5 V, VSS =0V, and Ta =Topr, unless otherwise noted)

Symbol

Characteristic

Value

Unit

Min.

Typ.

Max.

—

Programming and erasure endurance of flash memory (1)

100000

times

—

Word program time

100

2000

µs

—

Block erasure time

32 Kbyte block

200

tPS

Flash memory circuit start-up stabilization time

µs

—

Data retention (2)

Ta = 55°C (3, 4)

years

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