Electronic Components Datasheet Search
  English  ▼

X  

HTT1115E Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # HTT1115E
Description  Silicon NPN Epitaxial Twin Transistor
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HTT1115E Datasheet(HTML) 2 Page - Renesas Technology Corp

  HTT1115E Datasheet HTML 1Page - Renesas Technology Corp HTT1115E Datasheet HTML 2Page - Renesas Technology Corp HTT1115E Datasheet HTML 3Page - Renesas Technology Corp HTT1115E Datasheet HTML 4Page - Renesas Technology Corp HTT1115E Datasheet HTML 5Page - Renesas Technology Corp HTT1115E Datasheet HTML 6Page - Renesas Technology Corp HTT1115E Datasheet HTML 7Page - Renesas Technology Corp HTT1115E Datasheet HTML 8Page - Renesas Technology Corp HTT1115E Datasheet HTML 9Page - Renesas Technology Corp  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
HTT1115E
Rev.2.00 Aug 10, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25
°C)
Ratings
Item
Symbol
Q1
Q2
Unit
Collector to base voltage
VCBO
15
10
V
Collector to emitter voltage
VCEO
4
3.5
V
Emitter to base voltage
VEBO
1.5
1.5
V
Collector current
IC
50
80
mA
Collector power dissipation
PC
Total 200*
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to
+150
–50 to +150
°C
Note: Value on PCB. (FR–4 (13 x 13 x 0.635 mm)).
Electrical Characteristics (Q1)
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
15
V
IC = 10
µA, IE = 0
Collector cutoff current
ICBO
0.1
µA
VCB = 15 V, IE = 0
Collector cutoff current
ICEO
1
µA
VCE = 4 V, RBE = infinite
Emitter cutoff current
IEBO
0.2
µA
VEB = 0.8 V, IC = 0
DC current transfer ratio
hFE
100
130
170
VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre
0.3
0.45
pF
VCB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product
fT
10
12
GHz
VCE = 1 V, IC = 5 mA, f = 1 GHz
Forward transfer coefficient
|S21|
2
13
16
dB
Noise figure
NF
1.0
2.0
dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz,
ΓS = ΓL = 50 Ω
Electrical Characteristics (Q2)
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
10
V
IC = 10
µA, IE = 0
Collector cutoff current
ICBO
0.6
µA
VCB = 10 V, IE = 0
Collector cutoff current
ICEO
0.2
µA
VCE = 3.5 V, RBE = infinite
Emitter cutoff current
IEBO
0.1
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
80
100
130
VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre
0.8
1.1
pF
VCB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product
fT
4
6
GHz
VCE = 1 V, IC = 5 mA, f = 1 GHz
Forward transfer coefficient
|S21|
2
7
10
dB
Noise figure
NF
1.5
2.3
dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz
ΓS = ΓL = 50 Ω



Html Pages

1 2 3 4 5 6 7 8 9


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com