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HAT2218R Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # HAT2218R
Description  Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
PDF  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2218R Datasheet(HTML) 1 Page - Renesas Technology Corp

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Rev.3.00, Aug.23.2004, page 1 of 9
HAT2218R
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G0396-0300
Rev.3.00
Aug.23.2004
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• Built-in Schottky Barrier Diode
Outline
SOP-8
1 2
3
4
5
6
7
8
G1
D1
G2
S2
MOS1
MOS2 and
Schottky Barrier Diode
2
7
4
3
S1/D2
1
56
D1
8
S1/D2
S1/D2(kelvin)
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
MOS1
MOS2 & SBD
Unit
Drain to source voltage
VDSS
30
30
V
Gate to source voltage
VGSS
±20
±12
V
Drain current
ID
7.5
8.0
A
Drain peak current
ID(pulse)
Note1
60
64
A
Reverse drain current
IDR
7.5
8.0
A
Channel dissipation
Pch
Note2
1.5
1.5
W
Channel temperature
Tch
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤ 10 s


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