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HAT2218R Datasheet(PDF) 1 Page - Renesas Technology Corp |
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HAT2218R Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 10 page ![]() Rev.3.00, Aug.23.2004, page 1 of 9 HAT2218R Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0396-0300 Rev.3.00 Aug.23.2004 Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • Built-in Schottky Barrier Diode Outline SOP-8 1 2 3 4 5 6 7 8 G1 D1 G2 S2 MOS1 MOS2 and Schottky Barrier Diode 2 7 4 3 S1/D2 1 56 D1 8 S1/D2 S1/D2(kelvin) Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol MOS1 MOS2 & SBD Unit Drain to source voltage VDSS 30 30 V Gate to source voltage VGSS ±20 ±12 V Drain current ID 7.5 8.0 A Drain peak current ID(pulse) Note1 60 64 A Reverse drain current IDR 7.5 8.0 A Channel dissipation Pch Note2 1.5 1.5 W Channel temperature Tch 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s |
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