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BCR10PM Datasheet(PDF) 11 Page - Renesas Technology Corp

Part # BCR10PM
Description  MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
PDF  12 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BCR10PM Datasheet(HTML) 11 Page - Renesas Technology Corp

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Mar. 2002
The product guaranteed maximum junction
temperature 150
°C (See warning.)
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR10PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
23
101
57 102 23 5 7 103 23 5 7 104
120
0
20
40
60
80
100
140
160
101
103
7
5
3
2
100
23
5 7 101
102
7
5
3
2
23
5 7 102
4
4
44
IRGT III
IRGT I
IFGT I
160
100
80
40
20
0
140
60
120
–60
–20
20
60
100
160
140
–40
0
40
80
120
23
101
57 102 23 5 7 103 23 5 7 104
120
0
20
40
60
80
100
140
160
7
5
3
2
100
23
5 7 101
101
7
7
5
3
2
23
5 7 102
100
7
5
3
2
100
23
5 7 101
101
7
7
5
3
2
23
5 7 102
100
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125
°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/
µs)
TYPICAL EXAMPLE
Tj = 125
°C
I QUADRANT
III QUADRANT
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150
°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/
µs)
TYPICAL EXAMPLE
Tj = 150
°C
I QUADRANT
III QUADRANT
I QUADRANT
III QUADRANT
COMMUTATION CHARACTERISTICS
(Tj = 125
°C)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
TYPICAL
EXAMPLE
Tj = 125
°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
MINIMUM
CHARAC-
TERISTICS
VALUE
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
I QUADRANT
III QUADRANT
COMMUTATION CHARACTERISTICS
(Tj = 150
°C)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
TYPICAL
EXAMPLE
Tj = 150
°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
MINIMUM
CHARAC-
TERISTICS
VALUE
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (
µs)
TYPICAL EXAMPLE



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