DG2002 datasheet(3/9 Pages) VISHAY

3 / 9 page

Document Number: 71448

S-72609-Rev. C, 24-Dec-07

www.vishay.com

Vishay Siliconix

DG2002

SPECIFICATIONS V+ = 3.0 V

Parameter

Symbol

Test Conditions

Unless Otherwise Specified

V+ = 3 V, ±10 %

VIN = 0.4 or 2.0 V

Tempa

Limits

- 40 to 85 °C

Unit

Minb

Typc

Maxb

Analog Switch

Analog Signal Ranged

VNO, VNC

VCOM

Full

V+

On-Resistanced

rON

V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA

Room

Full

12.2

14.8

15.8

rON Flatness

rON

Flatness

V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA

Room

Switch Off Leakage Currentf

INO(off)

INC(off)

V+ = 3.3 V

VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V

Room

Full

- 500

- 4.0

500

4.0

ICOM(off)

Room

Full

- 500

- 4.0

500

4.0

Channel-On Leakage

Currentf

ICOM(on)

V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V

Room

Full

- 500

- 4.0

500

4.0

Digital Control

Input High Voltage

VINH

Full

Input Low Voltage

VINL

Full

0.4

Input Capacitanced

Cin

Full

Input Current

IINL or IINH

VIN = 0 or V+

Full

- 1

µA

Dynamic Characteristics

Turn-On Timed

tON

VNO or VNC = 2.0 V, RL = 300 Ω, CL = 35 pF

Figures 1 and 2

Room

Full

Turn-Off Timed

tOFF

Room

Full

714

Break-Before-Make Timed

Room

Charge Injectiond

QINJ

CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3

Room

Off-Isolationd

OIRR

RL = 50 Ω, CL = 5 pF, f = 1 MHz

Room

- 67

Crosstalkd

XTALK

Room

- 69

NO, NC Off Capacitanced

CNO(off)

CNC(off)

VIN = 0 or V+, f = 1 MHz

Room

Channel-On Capacitanced

CON

Room

Power Supply

Power Supply Range

V+

2.7

3.3

Power Supply Current

I+

VIN = 0 or V+

0.01

1.0

µA

Power Consumption

3.3

µW

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