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STL100NHS3LL Datasheet(PDF) 3 Page - STMicroelectronics |
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STL100NHS3LL Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() STL100NHS3LL Electrical characteristics 3/9 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 24V 500 µA IGSS Gate body leakage current (VDS = 0) VDS = ± 16V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 1mA 1 2.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 11A VGS= 4.5V, ID= 11A 0.0032 0.004 0.0042 0.0057 Ω Ω VGS=10V, ID=11A@125°C VGS=4.5V, ID=11A@125°C 0.005 0.006 Ω Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS=25V, f = 1MHz, VGS=0 4200 700 46.2 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15V, ID = 22A, VGS = 4.5V (see Figure 3) 27 8.5 7.2 35 nC nC nC |
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