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STL100NHS3LL Datasheet(PDF) 4 Page - STMicroelectronics |
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STL100NHS3LL Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Electrical characteristics STL100NHS3LL 4/9 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 15V, ID = 11A RG= 4.7Ω, VGS= 10V, (see Figure 2), (see Figure 7) 16 45 ns ns td(off) tf Turn-off delay time Fall time VDD = 15V, ID = 11A RG= 4.7Ω, VGS= 10V, (see Figure 2) (see Figure 7) 68 8 ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM Source-drain current Source-drain current (pulsed) 22 88 A A VSD (1) 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 5A, VGS = 0 0.75 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22V, di/dt = 100A/µs VDD = 20V, Tj = 25°C (see Figure 4) 30 30 2 ns nC A |
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