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IL74 Datasheet(PDF) 2 Page - Vishay Siliconix |
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IL74 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page ![]() www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83640 2 Rev. 1.6, 09-Jan-08 IL74/ILD74/ILQ74 Vishay Semiconductors Optocoupler, Phototransistor Output (Single, Dual, Quad Channel) Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Peak reverse voltage VR 3.0 V Forward continuous current IF 60 mA Power dissipation Pdiss 100 mW Derate linearly from 55 % 1.33 mW/°C OUTPUT Collector emitter breakdown voltage BVCEO 20 V Emitter collector breakdown voltage BVECO 5.0 V Collector base breakdown voltage BVCBO 70 V Power dissipation Pdiss 150 mW Derate linearly from 25 °C 2.0 mW/°C COUPLER Isolation test voltage t = 1.0 s VISO 5300 VRMS Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Total package dissipation IL74 Ptot 200 mW ILD74 Ptot 400 mW ILQ74 Ptot 500 mW Derate linearly from 25 °C IL74 2.7 mW/°C ILD74 5.33 mW/°C ILQ74 6.67 mW/°C Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Lead soldering time at 260 °C 10 s ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 20 mA VF 1.3 1.5 V Reverse current VR = 3.0 V IR 0.1 100 µA Capacitance VR = 0 V CO 25 pF OUTPUT Collector emitter breakdown voltage IC = 1.0 mA BVCEO 20 50 V Collector emitter leakage current VCE = 5.0 V, IF = 0 A ICEO 5.0 500 nA Capacitance collector emitter VCE = 0 V, f = 1.0 Hz CCE 10 pF COUPLER Saturation voltage, collector emitter IC = 2.0 mA, IF = 16 mA VCEsat 0.3 0.5 V Resistance (input to output) RIO 100 G Ω Capacitance (input to output) CIO 0.5 pF |
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