9

4115L–AERO–06/05

MG2RT

Electrical Characteristics

Absolute Maximum Ratings

DC Characteristics

Ambient temperature under bias (TA)

Military ......................................................-55 to +125

°C

Junction temperature.................................... TJ < 175

°C

Storage temperature.................................-65 to +150

°C

TTL/CMOS:

Supply voltage VDD ................................... -0.5V to +7V

I/O voltage ......................................-0.5V to VDD + 0.5V

Note:

Stresses above those listed may cause permanent

damage to the device. Exposure to absolute maxi-

mum rating conditions for extended period may affect

device reliability.

Table 3. DC Characteristics - Specified at VDD = +5V ± 10%

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

VIL

CMOS input

TTL input

0

0

1.5

0.8

V

VIH

CMOS input

TTL input

3.5

2.2

VDD

VDD

V

VOL

Output LOW voltage

0.4

V

VOH

Output HIGH voltage

3.9

V

VT+

Schmitt trigger positive threshold

CMOS input

TTL input

3.6

1.8

V

VT-

Schmitt trigger negative threshold

CMOS input

TTL input

1.2

1.0

V

Delta V

CMOS hysteresis 25

°C/5V

TTL hysteresis 25

°C/5V

1.9

0.6

V

IL

Input leakage

No pull up/down

Pull up

Pull down

-5

-55

79

-69

125

+5

-120

330

µA

µA

µA

IOZ

3-State Output Leakage current

-5

µA

IOS

Output Short circuit current

IOSN

IOSP

90

180

270

540

mA

BOUT3

BOUT6

BOUT12

BOUT24

ICCSB

Leakage current per cell

1.0

10.0

nA

ICCOP

Operating current per cell

0.39

0.58

µA/MHz/gate

Notes: 1. According buffer: Bout24, Bout12, Bout6, Bout3.

2. Supplied as a design limit but not guaranteed or tested. No more than one output at a time may be shorted for a maximum

duration of 10 seconds.

3. Without Schmitt trigger.