4

4761B–AUTO–09/05

T6801

5.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Parameters

Symbol

Value

Unit

Supply voltage

V

S

7.0

V

Ambient temperature range

T

amb

–40 to +125

°C

Storage temperature range

T

stg

–50 to +150

°C

Maximum junction temperature

T

j

+150

°C

6.

Thermal Resistance

Parameters

Symbol

Value

Unit

Junction ambient

160

K/W

7.

Electrical Characteristics

V

Parameters

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Supply, Pin 7

Supply voltage

V

S

4.75

5.25

V

Supply current

Input open

Input closed to GND

I

S

0.8

7

3.2

13

mA

mA

Low-voltage detection threshold

ON

OFF

V

TH(OFF)

3.7

3.0

4.6

3.8

V

V

Low-voltage hysteresis

V

hyst

0.55

1.05

V

Temperature shutdown

T

Chip

140

149

°C

Temperature shutdown hysteresis

T

hyst

5°C

Input, Pin 5

Zener-diode protection voltage

I

V

I

6.7

8.5

V

Zener-diode clamping current

I

I

±10

mA

Pull-up resistor

R

I

170

250

305

k

Ω

Switching threshold

OFF

ON

V

I

3.3

1.8

V

V

Hysteresis

1.5

V

Output, Pin 4

Zener-diode protection voltage

26.5

V

Integrated capacitor

5pF

Leakage current

2.5

µA

Saturation voltage

0.7

V

Current limitation

25

100

mA

Propagation delay

(470 pF, 1 k

Ω, 20V)

5µs