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LT5558 Datasheet(PDF) 3 Page - Linear Technology |
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LT5558 Datasheet(HTML) 3 Page - Linear Technology |
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3 / 16 page ![]() LT5558 3 5558fa SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS S11, ON LO Input Return Loss EN = High (Note 6) –10.6 dB S11, OFF LO Input Return Loss EN = Low (Note 6) –2.5 dB NFLO LO Input Referred Noise Figure (Note 5) at 900MHz 14.6 dB GLO LO to RF Small-Signal Gain (Note 5) at 900MHz 16.4 dB IIP3LO LO Input 3rd Order Intercept (Note 5) at 900MHz –3.3 dBm Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ) BWBB Baseband Bandwidth –3dB Bandwidth 400 MHz VCMBB DC Common-mode Voltage (Note 4) 2.1 V RIN, DIFF Differential Input Resistance Between BBPI and BBMI (or BBPQ and BBMQ) 3 k Ω RIN, CM Common Mode Input Resistance (Note 20) 100 Ω ICM, COMP Common Mode Compliance Current range (Notes 18, 20) –820 to 440 μA PLO-BB Carrier Feedthrough on BB POUT = 0 (Note 4) –46 dBm IP1dB Input 1dB compression point Differential Peak-to-Peak (Notes 7, 19) 3.4 VP-P,DIFF ΔGI/Q I/Q Absolute Gain Imbalance 0.05 dB ΔϕI/Q I/Q Absolute Phase Imbalance 0.2 Deg Power Supply (VCC) VCC Supply Voltage 4.5 5 5.25 V ICC(ON) Supply Current EN = High 108 135 mA ICC(OFF) Supply Current, Sleep mode EN = 0V 0.1 50 μA tON Turn-On Time EN = Low to High (Note 11) 0.3 μs tOFF Turn-Off Time EN = High to Low (Note 12) 1.1 μs Enable (EN), Low = Off, High = On Enable Input High Voltage Input High Current EN = High EN = 5V 1 230 V μA Shutdown Input Low Voltage EN = Low 0.5 V ELECTRICAL CHARACTERISTICS V CC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90° shifted (upper sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3) Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Specifications over the –40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: Tests are performed as shown in the configuration of Figure 7. Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ. Note 5: VBBPI - VBBMI = 1VDC, VBBPQ - VBBMQ = 1VDC. Note 6: Maximum value within –1dB bandwidth. Note 7: An external coupling capacitor is used in the RF output line. Note 8: At 20MHz offset from the LO signal frequency. Note 9: At 20MHz offset from the CW signal frequency. Note 10: At 5MHz offset from the CW signal frequency. Note 11: RF power is within 10% of final value. Note 12: RF power is at least 30dB lower than in the ON state. Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set in such a way that the two resulting RF tones are –10dBm each. Note 14: IM2 measured at LO frequency + 4.1MHz Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency + 2.2MHz. Note 16: Amplitude average of the characterization data set without image or LO feedthrough nulling (unadjusted). Note 17: The difference in conversion gain between the spurious signal at f = 3 • LO - BB versus the conversion gain at the desired signal at f = LO + BB for BB = 2MHz and LO = 900MHz. Note 18: Common mode current range where the common mode (CM) feedback loop biases the part properly. The common mode current is the sum of the current flowing into the BBPI (or BBPQ) pin and the current flowing into the BBMI (or BBMQ) pin. Note 19: The input voltage corresponding to the output P1dB. Note 20: BBPI and BBMI shorted together (or BBPQ and BBMQ shorted together). |
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