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LTC3447 Datasheet(PDF) 13 Page - Linear Technology |
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LTC3447 Datasheet(HTML) 13 Page - Linear Technology |
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13 / 16 page ![]() LTC3447 13 3447f APPLICATIO S I FOR ATIO loss dominates the efficiency loss at medium to high load currents. In a typical efficiency plot, the efficiency curve at very low load currents can be misleading since the actual power lost is of no consequence as illustrated in Figure 8. Figure 8. Power Loss vs Load Current The VIN quiescent current is due to two components: the DC bias current as given in the electrical characteristics and the internal main switch and synchronous switch gate charge currents. The gate charge current results from switching the gate capacitance of the internal power MOSFET switches. Each time the gate is switched from high to low to high again, a packet of charge, dQ, moves from VIN to ground. The resulting dQ/dt is the current out of VIN that is typically larger than the DC bias current. In continuous mode, IGATECHG = f(QT + QB) where QT and QB are the gate charges of the internal top and bottom switches. Both the DC bias and gate charge losses are proportional to VIN and thus their effects will be more pronounced at higher supply voltages. I2R losses are calculated from the resistances of the internal switches, RSW, and external inductor RL. In continuous mode, the average output current flowing through inductor L is “chopped” between the main switch and the synchro- nous switch. Thus, the series resistance looking into the SW pin is a function of both top and bottom MOSFET RDS(ON) and the duty cycle (DC) as follows: RSW = (RDS(ON)TOP)(DC) + (RDS(ON)BOT)(1 – DC) The RDS(ON) for both the top and bottom MOSFETs can be obtained from the Typical Performance Characteristics curves. Thus, to obtain I2R losses, simply add RSW to DAC = MIN DAC = MAX LOAD CURRENT (mA) 0.1 1 0.1 0.01 0.001 10 1 100 1000 3447 F08 RL and multiply the result by the square of the average output current. Other losses including CIN and COUT ESR dissipative losses and inductor core losses generally account for less than 2% total additional loss. Checking Transient Response The regulator loop response can be checked by looking at the load transient response. Switching regulators take several cycles to respond to a step in load current. When a load step occurs, VOUT immediately shifts by an amount equal to (ΔILOAD • ESR), where ESR is the effective series resistance of COUT. ΔILOAD also begins to charge or dis- charge COUT, which generates a feedback error signal. The regulator loop then acts to return VOUT to its steady state value. During this recovery time VOUT can be moni- tored for overshoot or ringing that would indicate a stability problem. For a detailed explanation of switching control loop theory, see Application Note 76. A second, more severe transient is caused by switching in loads with large (>1µF) supply bypass capacitors. The discharged bypass capacitors are effectively put in paral- lel with COUT, causing a rapid drop in VOUT. No regulator can deliver enough current to prevent this problem if the load switch resistance is low and it is driven quickly. The only solution is to limit the rise time of the switch drive so that the load rise time is limited to approximately (25 • CLOAD). Thus, a 10µF capacitor charging to 3.3V would require a 250µs rise time, limiting the charging current to about 130mA. Thermal Considerations In most applications the LTC3447 does not dissipate much heat due to its high efficiency. But, in applications where the LTC3447 is running at high ambient temperature with low supply voltage and high duty cycles, such as in dropout, the heat dissipated may exceed the maximum junction temperature of the part. If the junction temperature reaches approximately 150°C, both power switches will be turned off and the SW node will become high impedance. To avoid the LTC3447 from exceeding the maximum junc- tion temperature, the user will need to do some thermal analysis. The goal of the thermal analysis is to determine whether the power dissipated exceeds the maximum |
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