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LTC4213 Datasheet(PDF) 11 Page - Linear Technology |
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LTC4213 Datasheet(HTML) 11 Page - Linear Technology |
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11 / 20 page ![]() LTC4213 11 4213f supply transient dips below 1.97V of less than 80µs are ignored. ON Function When VON is below comparator COMP1’s threshold of 0.4V for 80µs, the device resets. The system leaves reset mode if the ON pin rises above comparator COMP2’s threshold of 0.8V and the UVLO condition is met. Leaving reset mode, the GATE pin starts up after a tDEBOUNCE delay of 60µs. When ON goes below 0.76V, the GATE shuts off after a 5µs glitch filter delay. The output is discharged by the external load when VON is in between 0.4V to 0.8V. At this state, the ON pin can re-enable the GATE if VON exceeds 0.8V for more than 8µs. Alternatively, the device resets if the ON pin is brought below 0.4V for 80µs. Once reset, the GATE pin restarts only after the tDEBOUNCE 60µs delay at VON rising above 0.8V. To protect the ON pin from overvoltage stress due to supply transients, a series resistor of greater than 10k is recommended when the ON pin is connected directly to the supply. An external resis- tive divider at the ON pin can be used with COMP2 to set a supply undervoltage lockout value higher than the inter- nal UVLO circuit. An RC filter can be implemented at the ON pin to increase the powerup delay time beyond the internal 60µs delay. Gate Function The GATE pin is held low in reset mode. 60µs after leaving reset mode, the GATE pin is charged up by an internal 100µA current source. The circuit breaker arms when VGATE > VSENSEN + ∆VGSARM. In normal mode operation, the GATE peak voltage is internally clamped to ∆VGSMAX above the SENSEN pin. When the circuit breaker trips, an internal MOSFET shorts the GATE pin to GND, turning off the external MOSFET. READY Status The READY pin is held low during reset and at startup. It is pulled high by an external pullup resistor 50µs after the circuit breaker arms. The READY pin pulls low if the circuit breaker trips or the ON pin is pulled below 0.76V, or VCC drops below undervoltage lockout. ∆VGSARM and VGSMAX Each MOSFET has a recommended VGS drive voltage where the channel is deemed fully enhanced and RDSON is minimized. Driving beyond this recommended VGS volt- age yields a marginal decrease in RDSON. At startup, the gate voltage starts at ground potential. The GATE ramps past the MOSFET threshold and the load current begins to flow. When VGS exceeds ∆VGSARM, the circuit breaker is armed and enabled. The chosen MOSFET should have a recommended minimum VGS drive level that is lower than ∆VGSARM. Finally, VGS reaches a maximum at ∆VGSMAX. Trip and Reset Circuit Breaker Figure 2 shows the timing diagram of VGATE and VREADY after a fault condition. A tripped circuit breaker can be reset either by cycling the VCC bias supply below UVLO thresh- old or pulling ON below 0.4V for >tRESET. Figure 3 shows the timing diagram for a tripped circuit breaker being reset by the ON pin. Calculating Current Limit The fault current limit is determined by the RDSON of the MOSFET and the circuit breaker voltage VCB. I V R LIMIT CB DSON = () 2 The RDSON value depends on the manufacturer’s distribu- tion, VGS and junction temperature. Short Kelvin-sense connections between the MOSFET drain and source to the LTC4213 SENSEP and SENSEN pins are strongly recommended. For a selected MOSFET, the nominal load limit current is given by: I V R LIMIT NOM CB NOM DSON NOM () () () () = 3 The minimum load limit current is given by: I V R LIMIT MIN CB MIN DSON MAX () () () () = 4 APPLICATIO S I FOR ATIO |
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