P5059

ETALDOC 863/2

Page 2 of 5

June 2005

SPECIFICATIONS

Electrical

At T = 25ºC and as circuit Fig. 2 unless otherwise stated.

Parameter

Conditions

Min

Typ

Max

Units

Insertion Loss

-

1.5

-

dB

Frequency Response

LF -3dB cutoff

HF -3dB cutoff

100Hz – 4kHz

-

-

-

10

60

-

-

-

±0.1

Hz

kHz

dB

Return Loss

(5)

200Hz – 4kHz

16

-

-

dB

Transhybrid Loss

(5)

200Hz – 4kHz

20

-

-

dB

Third Harmonic

Distortion

(1)

150Hz -3dBm in line

200Hz -10dBm in line

-

-

-70

-89

-

-

dBm

dBm

Voltage Isolation

(2)

50Hz

DC

2.12

3.0

-

-

-

-

kVrms

kV

Operating Range:

Functional

Storage

0

-40

-

-

+70

+85

ºC

ºC

Lumped equivalent circuit parameters as Fig. 1

DC resistance

(3)

90

86

-

-

110

103

Ω

Ω

Leakage inductance,

ΔL

3.0

-

5.0

mH

Shunt inductance, Lp

(4)

200Hz -43dBm

6

9

-

H

Shunt loss, Rp

200Hz -43dBm

12

15

-

k

Ω

Notes:

1.

Third

harmonic

typically

exceeds

other

harmonics by 10dB.

2.

Components are 100% tested at 6.5kVDC.

3.

Caution:

do not pass DC through windings.

Telephone line current must be diverted using

semiconductor line hold circuit or choke.

4.

At signal levels greater than –20dBm, Lp will

increase and Rp will decrease slightly but the

effect is usually favourable to the return loss

characteristic.

5.

Return loss and transhybrid loss can be

improved to 30dB in improved matching circuit.

The values shown relate to the simplest

configuration, Fig. 2.

Equivalent Circuit

Fig. 1

IDEAL

1:1

½ L

½ L