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LBCW70LT3G Datasheet(PDF) 3 Page - Leshan Radio Company

Part # LBCW70LT3G
Description  General Purpose Transistors PNP Silicon
PDF  7 Pages
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Manufacturer  LRC [Leshan Radio Company]
Direct Link  http://www.lrc.cn/
Logo LRC - Leshan Radio Company

LBCW70LT3G Datasheet(HTML) 3 Page - Leshan Radio Company

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LESHAN RADIO COMPANY, LTD.
3/7
Noise Figure is Defined as:
NF = 20 log
10 ( –––––––––––––––)
1/ 2
e
n = Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K
= Boltzman’s Constant (1.38 x 10 –23 j/°K)
T
= Temperature of the Source Resistance (°K)
R
s = Source Resistance ( Ω )
e
n
2 + 4KTR
S + I n
2 R
S
2
4KTR
S
LBCW69LT1G LBCW70LT1G
TYPICAL NOISE CHARACTERISTICS
(V
CE = – 5.0 Vdc, T A = 25°C)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
Figure 2. Noise Current
I
C , COLLECTOR CURRENT (µA)
Figure 3. Narrow Band, 100 Hz
I
C , COLLECTOR CURRENT (µA)
Figure 5. Wideband
I
C , COLLECTOR CURRENT (µA)
Figure 4. Narrow Band, 1.0 kHz
BANDWIDTH = 1.0 Hz
R
S
0
I
C=10 µA
100
µA
30
µA
300
µA
1.0mA
BANDWIDTH = 1.0 Hz
R
S
I
C=1.0mA
300
µA
100
µA
30
µA
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
NOISE FIGURE CONTOURS
(V
CE = – 5.0 Vdc, T A = 25°C)
10
7.0
5.0
3.0
2.0
1.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
10.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
200
300
500 700 1.0K
10
20
30
50
70
100
200
300
500 700 1.0K
10
20
30
50
70
100
200
300
500 700 1.0K
0.5 dB
1.0 dB
2.0dB
3.0 dB
1.0dB
2.0 dB
3.0 dB
5.0 dB
0.5dB
1.0dB
2.0dB
3.0 dB
5.0 dB
10 Hz to 15.7KHz
10
µA
0.5 dB
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
5.0 dB
~
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