SN75374 datasheet(11/13 Pages) TI

11 / 13 page

SN75374

QUADRUPLE MOSFET DRIVER

SLRS028 – SEPTEMBER 1988

3–11

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

APPLICATION INFORMATION

Power MOSFET drivers must be capable of supplying high peak currents to achieve fast switching speeds as

shown by the equation

PK +

where C is the capacitive load, and tr is the desired rise time. V is the voltage that the capacitance is charged

to. In the circuit shown in Figure 14(a), V is found by the equation

V = VOH – VOL

Peak current required to maintain a rise time of 100 ns in the circuit of Figure 14(a) is

PK +

* 0)4(10 *9)

100(10 * 9)

+ 120 mA

Circuit capacitance can be ignored because it is very small compared to the input capacitance of the IRF151.

With a VCC of 5 V and assuming worst-case conditions, the gate drive voltage is 3 V.

For applications in which the full voltage of VCC2 must be supplied to the MOSFET gate, VCC3 should be at least

3 V higher than VCC2.

SN75374 Datasheet(PDF) 11 Page - Texas Instruments