TC254P

336-

× 244-PIXEL CCD IMAGE SENSOR

SOCS060B – JUNE 1997 – REVISED JULY 1998

2

POST OFFICE BOX 655303

description (continued)

Charge is converted to signal voltage with a 12-

µV per electron conversion factor by a high-performance

charge-detection structure with built-in automatic reset and a voltage reference generator. The signal is buffered

by a low-noise two-stage source-follower amplifier to provide high output-drive capability.

The TC254P is built using TI-proprietary virtual-phase technology, which provides devices with high blue

response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC254P is

characterized for operation from –10

°C to 45°C.

functional block diagram

Amplifier

OUT

ADB

IAG2

1

4

SAG

6

IAG1

ABG

7

8

Storage Area

Blooming Protection

Image Area With

Dark Reference Elements

2

SUB

2 Dummy

Elements

3

Serial Register

SRG

5

Clear Line

Clearing Drain