1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Darlington Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

55

Vdc

Collector – Base Voltage

VCBO

80

Vdc

Emitter – Base Voltage

VEBO

12

Vdc

Collector Current — Continuous

IC

1.0

Adc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to

Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = 10 mAdc, VBE = 0)

V(BR)CEO

55

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

80

—

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

12

—

—

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, VBE = 0)

ICES

—

—

50

nAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

ICBO

—

—

50

nAdc

Emitter Cutoff Current

(VEB = 10 Vdc, IC = 0)

IEBO

—

—

50

nAdc

Order this document

by BC618/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC618

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

COLLECTOR 1

BASE

2

EMITTER 3