BC618

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Collector – Emitter Saturation Voltage

(IC = 200 mA, IB = 0.2 mA)

VCE(sat)

—

—

1.1

Vdc

Base – Emitter Saturation Voltage

(IC = 200 mA, IB = 0.2 mA)

VBE(sat)

—

—

1.6

Vdc

DC Current Gain

(IC = 100 µA, VCE = 5.0 Vdc)

(IC = 10 mA, VCE = 5.0 Vdc)

(IC = 200 mA, VCE = 5.0 Vdc)

(IC = 1.0 A, VCE = 5.0 Vdc)

hFE

2000

4000

10000

4000

—

—

—

—

—

—

50000

—

—

DYNAMIC CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz)

fT

150

—

—

MHz

Output Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz)

Cob

—

4.5

7.0

pF

Input Capacitance

(VEB = 5.0 V, IE = 0, f = 1.0 MHz)

Cib

—

5.0

9.0

pF

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model