TPIC1504

QUAD AND HEX POWER DMOS ARRAY

SLIS057 – OCTOBER 1996

5

POST OFFICE BOX 655303

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

trr

Reverse-recovery time

IS = 1 A,

VDS =14V

VGS = 0,

di/dt = 100 A/

µs

34

ns

QRR

Total diode charge

VDS = 14 V,

See Figures 2 and 23

di/dt = 100 A/

µs,

30

nC

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

td(on)

Turn-on delay time

30

td(off)

Turn-off delay time

VDD = 14 V,

RL = 14 Ω,ten = 10 ns,

34

ns

tr

Rise time

DD

,

tdis = 10 ns,

L

,

See Figure 3

en

,

15

ns

tf

Fall time

21

Qg

Total gate charge

V14 V

I

1 A

V10 V

3.2

4.5

Qgs(th) Threshold gate-to-source charge

VDS = 14 V,

ID = 1 A,

See Figure 4 and Figure 22

VGS = 10 V,

0.5

0.6

nC

Qgd

Gate-to-drain charge

See Figure 4 and Figure 22

0.9

1.1

LD

Internal drain inductance

7

nH

LS

Internal source inductance

7

nH

Rg

Internal gate resistance

10

Ω

thermal resistance

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

R

θJA

Junction-to-ambient thermal resistance

See Notes 5 and 8

90

R

θJB

Junction-to-board thermal resistance

See Notes 6 and 8

52

°C/W

R

θJP

Junction-to-pin thermal resistance

See Notes 7 and 8

28

NOTES:

5. Package mounted on a FR4 printed-circuit board with no heatsink.

6. Package mounted on a 24 in2, 4-layer FR4 printed-circuit board.

7. Package mounted in intimate contact with infinite heatsink.

8. All outputs with equal power