TPIC2701

7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY

SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996

3

POST OFFICE BOX 655303

electrical characteristics over case temperature operating range (unless otherwise noted)

(see Note 4)

PARAMETER

TEST CONDITIONS

TC†

TPIC2701M

UNIT

PARAMETER

TEST CONDITIONS

TC†

MIN

TYP

MAX

UNIT

V(BR)DS Drain to source breakdown voltage

ID = 1 µA,

VGS = 0

25

°C

60

V

V(BR)DS Drain-to-source breakdown voltage

ID = 1 mA,

VGS = 0

Full range

60

V

VTGS

Gate-to-source input threshold voltage

ID = 1 mA,

VDS = VGS

Full range

1.2

1.75

2.4

V

VDS( )

Drain to source on state voltage

ID =0 5A

VGS =15V

25

°C

0.25

0.45

V

VDS(on)

Drain-to-source on-state voltage

ID = 0.5 A,

VGS = 15 V

Full range

0.65

V

IDSS

Zero gate voltage drain current

VDS =48V

VGS =0

25

°C

0.05

1

µA

IDSS

Zero-gate-voltage drain current

VDS = 48 V,

VGS = 0

Full range

10

µA

IGSSF

Forward gate current, drain short-circuited to

VGS =20V

VDS =0

25

°C

10

100

nA

IGSSF

g,

source

VGS = 20 V,

VDS = 0

Full range

10

µA

IGSSR

Reverse gate current, drain short-circuited to

VGS =20 V VDS =0

25

°C

10

100

nA

IGSSR

g,

source

VGS = – 20 V, VDS = 0

Full range

10

µA

rDS( )

Forward drain source on state resistance

VGS =15V

ID =0 5A

25

°C

0.5

0.9

Ω

rDS(on)

Forward drain-source on-state resistance

VGS = 15 V,

ID = 0.5 A

Full range

1.3

Ω

g

fs

Forward transconductance

VDS = 15 V,

ID = 0.5 A

25

°C

0.8

S

Ciss

Short-circuit input capacitance, common source

105

Coss

Short-circuit output capacitance, common source

VDS = 25 V,

VGS = 0,

Full range

65

pF

Crss

Short-circuit reverse transfer capacitance,

common source

f = 300 kHz

Full range

15

F

† Full range is – 55

°C to 125°C.

NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal

effects must be taken into account separately.

PARAMETER

TEST CONDITIONS

TPIC2701

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VSD

Forward On voltage

IS = 0.5 A,

VGS = 0

0.9

1.4

V

trr(SD) Reverse-recovery time

IS = 0.5 A,

VGS = 0,

VDS = 48 V,

165

ns

QRR

Total source-drain diode charge

SGS

di/dt = 25 A/

µs,

DS

See Figure 1

250

nC

source-to-drain diode characteristics over operating case temperature range (unless otherwise

noted) (see Note 4)

PARAMETER

TEST CONDITIONS

TPIC2701M

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VSD

Forward On voltage

IS = 0.5 A,

VGS = 0

0.9

1.4

V

trr

Reverse recovery time

IS = 0.5 A,

VGS = 0,

VDS = 48 V,

165

ns

QRR

Total source-to-drain diode charge

SGS

di/dt = 25 A /

µs,

TC = 25°C,

DS

See Figure 1

250

nC

NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal

effects must be taken into account separately.