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LE25LA642CS Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LE25LA642CS Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 14 page ![]() LE25LA642CS Pin Assignment Pin Descriptions PIN.1 WP Write protect PIN.2 VSS Ground PIN.3 VDD Power supply PIN.4 CS Chip select PIN.5 HOLD Hold PIN.6 SO Serial data output PIN.7 SI Serial data input PIN.8 SCK Serial clock No.NA1473-2/14 Block Diagram ADDRESS BUFFERS & LATCHES X- DECODER EEPROM Cell Array Y-DECODER I/O BUFFERS & DATA LATCHES CONTROL LOGIC SERIAL INTERFACE CS SCK SI SO WP HOLD Specifications Absolute Maximum Rating/If an electrical stress exceeding the maximum rating is applied, the device may be damaged. Parameter Symbol Conditions Ratings Unit Storage temperature -65 to +150 °C Supply voltage -0.5 to 4.6 V DC input voltage -0.5 to VDD+0.5 V Overshoot voltage (below 20ns) -1.0 to VDD+1.0 V Operating Conditions Parameter Symbol Conditions Ratings Unit Operating temperature (at read) -40 to +85 °C Operating temperature (at write) -20 to +85 °C Operating supply voltage 1.8 to 3.6 V DC Electrical Characteristics Parameter Symbol Conditions min typ max Unit CS = 0.1VDD, HOLD = WP = 0.9VDD SI = 0.1VDD/0.9VDD, SO = Open Operating frequency = 3MHz, VDD = 3.6V 3 mA Supply current when reading ICCR CS = 0.1VDD, HOLD = WP = 0.9VDD SI = 0.1VDD/0.9VDD, SO = Open Operating frequency = 2MHz, VDD = 2.5V 2 mA Supply current when writing ICCW VDD = VDD Max 3 mA CMOS standby current ISB VIN = VDD or VSS, VDD = VDD Max 2 μA Input leakage current ILI VIN = VSS to VDD, VDD = VDD max. -2 2 μA Output leakage current ILO VIN = VSS to VDD, VDD = VDD max. -2 2 μA 1 2.01 x 1.06 Bottom view 2 3 6 8 4 75 |
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