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LE25LA642CS Datasheet(PDF) 3 Page - Sanyo Semicon Device

Part # LE25LA642CS
Description  64Kbit Serial SPI EEPROM
PDF  14 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LE25LA642CS Datasheet(HTML) 3 Page - Sanyo Semicon Device

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LE25LA642CS
Input low voltage
VIL
VDD = VDD max.
-0.3
0.3VDD
V
Input high voltage
VIH
VDD = VDD min.
0.7VDD
VDD+0.3
V
VOL1
IOL = 1.5mA, VDD = 3.6V
0.4
V
Output low voltage
VOL2
IOL = 0.15mA, VDD = 1.8V
0.2
V
VOH1
IOH = -0.4mA, VDD = 3.6V
0.8VDD
V
Output high voltage
VOH2
IOH = -0.2mA, VDD = 1.8V
0.8VDD
V
Capacitance at Ta = 25
°C, f = 1.0MHz
Parameter
Symbol
Conditions
min
typ
max
Unit
Output pin capacitance
CDQ
VDQ = 0V
12
pF
Input pin capacitance
CIN
VIN = 0V
6
pF
Note : These parameters are sampled and not 100% tested.
AC Electrical Characteristics
Input pulse level
0.2×VDD to 0.8×VDD
Input pulse rise/fall time
10ns
Output detection voltage
0.5×VDD
Output load
30pF
AC Characteristics (at FCLK = 3MHz)/VDD = 2.5V to 3.6V
Parameter
Symbol
Conditions
min
typ
max
Unit
Clock frequency
FCLK
3
MHz
SCK logic high level pulse width
tCLHI
100
ns
SCK logic low level pulse width
tCLLO
100
ns
Input signal rise/fall time
tRF
1
us
CS setup time
tCSS
100
ns
SCK setup time
tCLS
100
ns
Data setup time
tDS
30
ns
Data hold time
tDH
50
ns
No.NA1473-3/14
CS hold time
tCSH
100
ns
SCK hold time
tCLH
150
ns
CS standby pulse width
tCPH
100
ns
CS output high impedance time
tCHZ
150
ns
SCK output data time
tV
120
ns
Output data hold time
tHO
0
ns
WP setup time
tWPS
30
ns
WP hold time
tWPH
30
ns
HOLD setup time
tHS
30
ns
HOLD hold time
tHH
30
ns
HOLD output low impedance time
tHLz
150
ns
HOLD output high impedance time
tHHz
300
ns
Write cycle time
tWC
10
ms
SCK output low impedance time
tCLZ
0
ns



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