1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

One Watt

High Voltage Transistor

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

300

Vdc

Collector – Base Voltage

VCBO

300

Vdc

Emitter – Base Voltage

VEBO

5.0

Vdc

Collector Current — Continuous

IC

500

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

1.0

8.0

Watts

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

2.5

50

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

125

°C/W

Thermal Resistance, Junction to Case

RqJC

50

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

300

—

Vdc

Collector – Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

300

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

V(BR)EBO

5.0

—

Vdc

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0)

ICBO

—

0.01

µAdc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

IEBO

—

10

µAdc

1. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

Order this document

by BDC05/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BDC05

CASE 29–05, STYLE 14

TO–92 (TO–226AE)

1

2

3

COLLECTOR

2

3

BASE

1

EMITTER