BDC05

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 25 mAdc, VCE = 20 Vdc)

hFE

40

—

—

Collector–Emitter Saturation Voltage(1)

(IC = 20 mAdc, IB = 2.0 mAdc)

VCE(sat)

—

2.0

Vdc

Base–Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

VBE(sat)

—

2.0

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)

fT

60

—

MHz

Collector–Base Capacitance

(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)

Cre

—

2.8

pF

1. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

200

20

1.0

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

0.6

0.4

0.3

0

0.1

10

1.0

TJ = 25°C

IC = 10 mA

0.2

0.5

2.0

5.0

20 30

2.0

3.0

5.0 7.0

10

20

50

70 100

100

30

50

70

TJ = 125°C

25

°C

–55

°C

VCE = 10 V

0.5

0.2

0.1

IC = 20 mA

IC = 30 mA

30