BDC05

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

VR, REVERSE VOLTAGE (VOLTS)

100

50

20

10

5.0

2.0

1.0

0.5

0.2

100

TJ = 25°C

Ceb

IC, COLLECTOR CURRENT (mA)

100

70

50

30

20

10

TJ = 25°C

VCE = 20 V

f = 20 MHz

200

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

Ccb

1.0

20

5.0

10

50

70

2.0

100

3.0

7.0

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10

20

50

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN

LIMIT

500

200

100

50

20

10

100

200 300

100

µs

1.0 ms

TA = 25°C

1 k

DUTY CYCLE

≤ 10%

1.0 s

30

IC, COLLECTOR CURRENT (mA)

1.4

0

1.0

20

TJ = 25°C

VBE(on) @ VCE = 10 V

VCE(sat) @ IC/IB = 10

5.0

10

50

70

VBE(sat) @ IC/IB = 10

2.0

100

IC, COLLECTOR CURRENT (mA)

2.5

1.0

R

θVB for VBE

3.0

7.0

1.2

1.0

0.8

0.6

0.4

0.2

20

5.0

10

50

70

2.0

100

3.0

7.0

1.5

2.0

1.0

0.5

0

–0.5

–1.0

–1.5

–2.0

–2.5

IC

IB

+ 10

R

θVC for VCE(sat)

25

°C to 125°C

–55

°C to 25°C

–55

°C to 125°C

30

30

5.0

Figure 3. “On” Voltages

Figure 4. Temperature Coefficients

Figure 5. Capacitance

Figure 6. Current–Gain — Bandwidth Product

Figure 7. Active Region — Safe Operating Area