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LTC3620 Datasheet(PDF) 3 Page - Linear Technology |
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LTC3620 Datasheet(HTML) 3 Page - Linear Technology |
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3 / 16 page ![]() LTC3620 3 3620f Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: TJ is calculated from the ambient temperature, TA, and power dissipation, PD, according to the following formula: TJ = TA + (PD)(88.5°C/W) Note 3: The LTC3620 is tested in a proprietary test mode that connects VFB to the output of the error amplifier. ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TA = 25°C. VIN = 3.6V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VFMIN FMIN/MODE Input Voltage High 0.9 V FMIN/MODE Input Voltage Low 0.7 V fEXT FMIN/MODE Input Frequency 20 300 kHz IFMIN/MODE FMIN/MODE Pin Leakage Current ±0.01 ±1 μA ISW Switch Leakage Current VRUN = 0V, VSW = 0V or 5.5V, VIN = 5.5V ±0.01 ±1 μA IFB VFB Pin Current LTC3620, VFB = 0.6V LTC3620-1, VFB = 1.1V 0 1.2 ±30 2.0 nA μA VUVLO Undervoltage Lockout (UVLO) VIN Decreasing 2.7 2.8 2.9 V VLOBATB LOBATB Threshold VIN Decreasing 2.93 3.0 3.08 V RLOBATB LOBATB Pull-Down On-Resistance 15 Ω VHLOBATB LOBATB Hysteresis 100 mV RPFET RDS(ON) of P-channel FET (Note 5) ISW = 50mA, VIN = 3.6V 2.0 Ω RNFET RDS(ON) of N-channel FET (Note 5) ISW = –50mA, VIN = 3.6V 1.0 Ω Note 4: The LTC3620E is guaranteed to meet performance specifications from 0°C to 85°C junction temperature. Specifications over the –40°C to 85°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. Note 5: The DFN switch-on resistance is guaranteed by correlation to wafer level measurements. |
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