APT50GS60SRG datasheet(6/7 Pages) MICROSEMI

6 / 7 page

D.U.T.

VCE

VCC

Figure 24, Turn-off Switching Waveforms and Deﬁnitions

Figure 23, Turn-on Switching Waveforms and Deﬁnitions

Figure 22, Inductive Switching Test Circuit

J = 125°C

Collector Current

Collector Voltage

Gate Voltage

Switching Energy

10%

d(on)

90%

10%

J = 125°C

Collector Voltage

Collector Current

Gate Voltage

Switching Energy

90%

d(off)

10%

90%

APT40DQ60

FOOT NOTE:

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at TJ = 25°C, L = 224µH, RG = 25Ω, IC = 50A

3 Short circuit time: VGE = 15V, VCC ≤ 600V, TJ ≤ 150°C

4 Pulse test: Pulse width < 380µs, duty cycle < 2%

5 Co(cr) is deﬁned as a ﬁxed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES.

6 Co(er) is deﬁned as a ﬁxed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of

VCE less than V(BR)CES, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10.

7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452).

8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the

IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode.

9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy.

10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

APT50GS60B_SR(G)

APT50GS60SRG Datasheet(PDF) 6 Page - Microsemi Corporation